We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.