화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.146, No.1, 336-338, 1999
Sb diffusion in heavily doped Si substrates
We investigated Sb diffusion in p(-), p(+), and n(+) substrates and determined the diffusion coefficient. We showed that our evaluated diffusion coefficient associated with neutral point defects is lower than the reported values by one order of magnitude, and it provides a better explanation of experimental data over a range of annealing conditions.