We have applied the liquid delivery technique for the thermally activated chemical vapor deposition of copper using a solution of Cu(hfac)(2) in isopropanol [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Using a substrate temperature of 300 degrees C and reactant partial pressures of 1.8 Torr Cu(hfac)(2), 12 Torr isopropanol, and 40 Torr H-2, we obtained a maximum growth rate of 6.7 +/- 0.5 mg cm(-1) h(-1) (ca. 125 nm min(-1)). There is an induction time of about 5 min, which correlates with the time required for the initial copper dusters to grow into contact with each other (i.e., as judged from scanning electron microscope images). Film resistivities Ge in the range 2.5-5.0 mu Ohm cm (vs. 1.68 mu Ohm cm for bulk Cu). The scanning electron microscope images suggest these high values are caused by residual void volume between the clusters. Growth rates and resistivities can be improved by eliminating H2O from the starting Cu(hfac)(2)/isopropanol solution, by wet-etching the substrate or by increasing the substrate pretreatment time.