Selective growth of Fe-doped InP around masked, nonplanar structures has been studied using low-pressure pulsed metallorganic epitaxy (PME). The structures, which are etched by a combination of reactive ion etching and wet chemical etching, have a mask overhang length of less than 0.5 mu m and a mesa height of 2-3 mu m. We show that it is possible to obtain a planar growth surface on a "nonre-entrant" etched profile using low-pressure PME, at a growth temperature of 630 degrees C. The growth behavior has been influenced by the stripe orientations, the etched profiles, and the growth temperature. A plane overshooting phenomenon is observed and discussed in terms of a surface migration mechanism. This new growth technique has been used in device fabrication. (C) Electrochemical Society. S0013-4651(98)02-046-1. All rights reserved.