The effects of several patterning process steps on the critical current J(c) and surface resistance R(s) of YBa2Cu3O7 films are described. Included are two off-axis sputtering processes and a metalorganic chemical-vapor deposition (MOCVD) process, all producing in situ superconducting films with c-axis epitaxial orientation. J(c) and R(s) parameters were measured by mutual inductance and parallel plate resonator techniques, respectively, so that the films did not require patterning for the measurement. Applying a polymer film and stripping, either with acetone or with an O2 plasma, resulted in no change in R(s). Brief ion milling, as well as baking at 185-degrees-C with polymer film present, caused moderate degradation (approximately 25 muOMEGA) for films deposited on MgO (both sputtered and MOCVD). The damage caused by ion milling sputtered films on LaAlO3 was considerably greater (approximately 100 muOMEGA); photoresist developer also had a significant effect. The degree of degradation in R(s) for these films suggests that the surface damage results in secondary effects that penetrate well into the film. This damage was not removed by annealing in 02; in fact it was made substantially worse. J(c) was increased slightly by all processes, by an amount ranging from 5% to 50%.