Yttria-stabilized zirconia (YSZ) thin films with in-plane texturing were successfully deposited on polycrystalline metal tape (Hastelloy) by modified bias sputtering. Two specially devices electrodes installed in a sputtering system generated a characteristic plasma with a parabolic shape. A directionally aligned argon ion flux extracted from this plasma appeared to impinge obliquely on the growing film. X-ray measurements revealed that the resulting YSZ films exhibited clear in-plane grain texturing as well as a strong (001) orientation. The best YSZ films grown on Hastelloy substrates had DELTApsi [full width at half-maximum (FWHM) of a peak in phi scan]=20-degrees and DELTAomega (FWHM of a peak in the rocking curve) = 5-degrees. An advantage of this new bias sputtering technique was pointed out in its applicability to the growth of YSZ as a buffer layer on a relatively long metal tape for deposition of YBa2Cu3Oy superconducting thin films.