A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintmnics due to the longer spin diffusion. By utilizing optimal temperature process and VIII flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Th20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.