A new method of preparation of oxide thin films is presented in this paper. The method consists of the bombardment of a substrate with accelerated O2+ species while a flow of a volatile organometallic precursor is directed on its surface. This ion beam induced chemical vapor deposition procedure (IBICVD) has been used to prepare TiO2 thin films from Ti(CH3CH2O)4 as a precursor. Also, for comparison, TiO2 thin films have been grown by a plasma assisted chemical vapor deposition (CVD) method. A study of the growing process has been carried out by x-ray photoelectron spectroscopy (XPS), while the films have been characterized by XPS, scanning electron microscopy, transmission electron spectroscopy, and UV-visible (UV-vis) spectroscopy. Values of the refraction index of the TiO2 films prepared by IBICVD are similar to those of other TiO2 prepared by ion beam assisted methods as given in the literature, but superior to those of the films grown in the present study by plasma assisted CVD.