Journal of Vacuum Science & Technology A, Vol.13, No.2, 237-243, 1995
Compositional and Electrical-Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical-Vapor-Deposition Using a Deuterium Lamp
Keywords:LOW-TEMPERATURE GROWTH;PHOTO-CVD;SILICON DIOXIDE;DOUBLE-EXCITATION;THIN-FILM;SI3H8;SIO2-FILMS;MIXTURES;SI2H6