Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.13, No.2, 289-294, 1995 DOI10.1116/1.579412 Export Citation Interface Structure of Ge/Si(111) During Solid-Phase Epitaxy Studied by Medium-Energy Ion-Scattering Sumitomo K, Nishioka T, Shimizu N, Shinoda Y, Ogino T Keywords:OPTICAL-TRANSITIONS;GE;SUPERLATTICES Please enable JavaScript to view the comments powered by Disqus.
