Journal of Vacuum Science & Technology A, Vol.13, No.3, 1155-1159, 1995
Effect of 20-95 eV Ar Ion-Bombardment of GaAs(001) - In Pursuit of Damage-Free Ion-Assisted Growth and Etching
Keywords:MOLECULAR-BEAM EPITAXY;LOW-TEMPERATURE;SI 100;NUCLEATION;SI(100);INAS;SEMICONDUCTORS;SUPPRESSION;DEPOSITION;QUALITY