Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.13, No.3, 1671-1675, 1995 DOI10.1116/1.579749 Export Citation Nitrogen-Atom Incorporation at Si-SiO2 Interfaces by a Low-Temperature (300-Degrees-C), Pre-Deposition, Remote-Plasma Oxidation Using N2O Lee DR, Lucovsky G Keywords:NITRIDED OXIDES;CHARGES;MOSFETS Please enable JavaScript to view the comments powered by Disqus.
