This work deals with calculation of the thickness distribution of films deposited by sputtering in different configurations : "on axis" and "off axis" diodes, facing target and hollow cathode, and for different polar distributions of ejected species, We demonstrate that a difference in the polar distribution may induce deviations from stoichiometry especially in the diode configuration. In the facing target and hollow cathode configurations, the deviations are strongly reduced. The theoretical calculations fit well with the experimental results that were obtained with mixed valence copper oxide sputtered films.