화학공학소재연구정보센터
Journal of Materials Science, Vol.56, No.13, 7879-7888, 2021
Effect of atomic layer deposited Al2O3 and subsequent annealing on the nanomechanical properties on various substrates
This paper studies the effect of atomic layer deposited Al2O3 and consequent annealing on the mechanical properties on different substrates. Uniform Al2O3 thin film with a thickness of similar to 100 nm was deposited on different substrates including Si (100), Al2O3 (0001), and yttria-stabilized zirconia (100). Nanoindentation results indicate that the deposition of Al2O3 layer reduces the film-substrate system mechanical properties including hardness (from similar to 9.6-24.5 to similar to 9.1-17.0 GPa), elastic modulus (from similar to 140.7-254.0 to similar to 132.5-240.4 GPa), and fracture toughness (from similar to 0.87-1.26 to similar to 0.36-0.98 MPa root m) for each substrate. Meanwhile, peeling and fracturing of the thin film can also be observed after nanoindentation. Subsequent 10 min annealing at 1000 degrees C in argon leads to the crystallization of the deposited Al2O3 thin film, therefore, enhance the film-substrate system mechanical properties (hardness similar to 15.9-24.8 GPa, elastic modulus similar to 228.0-356.8 GPa). The annealing process can also increase the adhesion force between the thin film and consequently no cracks after nanoindentation.