The domain structure of two selected single-crystal VO(2)microrods (MRs) with different morphologies was mapped by pixelated Raman imaging through the metal-to-insulator transition (MIT) during heating and cooling schedules through 68 degrees C. The results show that MIT does not occur simultaneously and uniformly throughout the whole MR, and instead, it proceeds through alternating metal-insulator domains. Each structural domain possesses its own MIT transition temperature and hysteresis width. The variations in MIT characteristics among different domains of a single MR are probably ascribed to structural nonuniformity. The observed overall MIT transition and hysteresis width of a given VO2 single-crystal MR is an aggregate manifestation of the MIT properties of domains within the crystal. [GRAPHICS]