An x-ray photoelectron spectroscopy study of Ne+ induced interaction between SF6 and monocrystalline silicon at low temperature (123 K less than or equal to T less than or equal to 293 K) is reported. The simultaneous exposure to SF6 gas and 500 eV Ne+ ion beam generates on silicon an interaction layer composed of chemisorbed fluorine and sulfur. The kinetics of the Ne+ activated dissociative chemisorption of SF6 molecules is furthered by the increase in the fraction of the surface sites occupied by physisorbed SF6 molecules (increase in SF6 pressure and/or decrease in substrate temperature). However, above a threshold degree of coverage estimated to a few monolayers, the activated dissociative chemisorption is strongly slowed down because the Ne+ ions do not reach the interface between SF6 adsorbate and silicon substrate.