The scanning capacitance microscope (SCM) is capable of quantitative two-dimensional carrier and dopant density mapping with nanometer scale spatial resolution. The method can be applied to either the top or the cross-sectional surface of a silicon sample. The quantitative inversion of SCM data to carrier or dopant density is achieved using a quasi-one-dimensional model. Cross-sectional SCM measurements have been performed on samples that have abrupt dopant density steps. The dopant density in these samples systematically varies from 10(17) to 10(20) cm(-3). The cross-sectional measurements provide a means to directly compare the SCM results with vertical secondary ion mass spectroscopy (SIMS) profiles. A spatial resolution of appromimately 25 nm is achieved. A first order quantitative agreement between the SCM and SIMS profiles is found.