Using a supermagnetron plasma apparatus, electrically conductive amorphous hydrogenated carbon (a-C:H) films were formed at wafer temperatures below 60 degrees C. CH4/N-2 mixed gas was introduced into the discharge chamber and nitrogen-doped a-C:H films were formed on thermally oxidized Si wafers. A high electrical conductivity of 1.02 x 10(-4) Omega cm(-1) was obtained at a N-2 concentration of 25%, a gas pressure of 50 mTorr, and a radio-frequency power of 600 W. Measured film growth rate and microhardness were 160 nm/min and 1650 kg/mm(2), respectively. Nitrogen inclusion in a film was confirmed by secondary-ion-mass spectroscopy, and its atomic concentration was measured to be about 4 x 10(22) atoms/cm(3).