Journal of Vacuum Science & Technology A, Vol.14, No.4, 2356-2360, 1996
In-Situ Wafer Temperature Monitoring of Silicon Etching Using Diffuse-Reflectance Spectroscopy
Real time, in situ temperature measurements during chemical downstream etching of silicon wafers have been performed using a diffuse reflectance spectroscopy based sensor [Weilmeier et. nl., Can. J. Phys. 69, 422 (1991)]. The spectrometer has a spatial resolution of 1 cm(2), updates the temperature every 2 s, and has a temperature resolution of better than 1 degrees C. The thermal time constant the wafers and the thermally regulated electrostatic chuck (10 degrees C
Keywords:MOLECULAR-BEAM EPITAXY