Deposition of copper thin films by an alternate supply of CuCl and Zn was examined. Due to a reversible dissolution of Zn into the Cu film, no self-limiting growth characteristic for the atomic layer epitaxy method could be achieved. The resulting films contained about 3 at. % zinc while chlorine residue contents were below 0.5 at. %. The films were polycrystalline consisting of rather coarse grains.