Bismuth telluride films were deposited by coevaporation at various Te/Bi flux ratios to optimize their resistivity and their Seebeck coefficients for use in a thin film Peltier heat pump. Bismuth telluride films deposited at a flux ratio of Te/Bi = 2.3 were found to possess optimal characteristics. Using these coatings, microintegrated Peltier heat pumps were fabricated on micromachined oxide bridges using standard semiconductor patterning and etching techniques. Chrome-gold and bismuth telluride metallizations were used to form the thermoelectric junctions. A maximum heat pumping rate of -30 mu W was achieved by the device when operating in the cooling mode. A temperature reduction of 1.5 degrees C was attained, with an initial thermal response time in the cooling mode of 10 ms/degrees C.