Journal of Vacuum Science & Technology A, Vol.16, No.3, 1311-1315, 1998
Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N-2 environments
Amorphous SiC and SiCxNy films have been deposited by pulsed laser deposition on single crystal silicon substrates by KrF (248 nm) excimer laser ablation of a SiC sintered target in a vacuum system at room temperature using nonreactive, Ar, and reactive, N-2, background gases at different pressures. The pressure range in the growth chamber was from 4x10(-8) Torr to 80 mTorr. The optical properties and stoichiometry of films were varied by the introduction of a background gas. The resulting films are inspected by spectroellipsometry in the photon-energy range of 1.5