Journal of Vacuum Science & Technology A, Vol.16, No.3, 1767-1771, 1998
Hydrogen in silicon : Fundamental properties and consequences for devices
The interactions between hydrogen and silicon are investigated based on first-principles calculations. After a comprehensive overview of various configurations attention is focused on the energetics and dissociation of Si-H bonds. An examination of the dissociation mechanism of Si-H bonds suggests an explanation for the observed difference in stability between hydrogen and deuterium at dangling bonds. Connections between the phenomena at surfaces, interfaces; and in amorphous materials will be pointed out.
Keywords:OXIDE-SEMICONDUCTOR TRANSISTORS;HOT-ELECTRON DEGRADATION;CRYSTALLINE SEMICONDUCTORS;DESORPTION;ENERGETICS;REDUCTION;DIFFUSION;SURFACES;BONDS