Room temperature visible photoluminescence was observed in amorphous silicon oxides deposited by an electron cyclotron resonance plasma source and also in Coming glass (7059). The intrinsic group of luminescence bands in the Coming glass was consistent with the stoichiometric oxide film. Bands at 2.25 (550), 2.84 (437), and 3.40 eV (365 nm) were observed in both the as-deposited oxide film and the Coming glass. The 3.40 eV band strongly correlates to the 2.84 eV band, implying an original affinity with the origin of the neutral oxygen vacancy and the hole trapped E' center. The origin of the 2.25 eV band is not clear, however, although it appears to correlate with the Frenkel-type defect structure in amorphous oxides. The deposited oxide film was annealed and highly split luminescence spectra were observed. Furthermore, the Si-enriched sample showed multiple peaks in both the as-deposited and post-annealed samples. This indicates that luminescences may be related to the condensate of Si particles in oxides.