Zirconium carbide (ZrC) films were prepared by using two Ar+ beams to sputter a zirconium target and a graphite target separately, and a third Ar+ beam to simultaneously bombard the growing film. The effects of the arrival rate ratio of zirconium to carbon (Zr/C) and the bombarding Ar+ energies of 0.1-15 keV on the formation, structure and properties of the films were investigated. It was found that although the Zr/C atomic ratio could be varied within a range of 0.45-1.26 without inhibiting the formation of crystalline ZrC, the increase of Zr/C will reduce the hardness and enhance the (220) orientation of ZrC films. The energy of bombarding Art ions substantially influenced the crystallographic orientation and morphology of the deposited films. The experimental results disclosed that the ZrC films prepared by 800-1000 eV Arf-assisted bombardment with a Zr/C ratio of 0.78-0.97 have a fine and compact structure, and hardness as high as 2800-3150 kgf mm(-2).