An approach to deposit (001) oriented, in-plane-aligned CeO2 buffer layer on rolling-assisted biaxially-textured nickel tapes by ion beam assisted deposition is reported. The CeO2 films grown on the rolling-textured nickel tapes by pulsed laser deposition without ion bombardment show (111) orientation. CeO2 films grown on the rolling-textured nickel tapes by ion beam assisted pulsed laser deposition without introducing hydrogen are (001) oriented at deposition temperature below about 380 degrees C. The full width at half maximum of (111) phi-scan of the (001) cub textured CeO2 films is 9 degrees. The films growing at higher temperature are (111) orientation, no matter they are deposited with ion bombardment or without ion bombardment.