Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully deposited on Pt/SiO2/Si. substrates using a sintered SrBi2Ta2O9 ceramic target, and Pi and Ta metal targets by a modified rf magnetron sputtering technique. The ferroelectric properties of the films were greatly dependent on the bismuth sputtering power. The SET films deposited under the conditions of rf power of 100 W, Bi de power of 25 W, and Ta de power of 10 W showed a dense and uniform microstructure. A remanent polarization, P-r, of 7.51 mu C/cm(2) and a coercive field E-c, of 28 kV/cm were obtained for an excitation voltage of 5 V. The SET films show practically no polarization fatigue after 7 x 10(10) switching cycles. Their retention characteristics look very promising up to 10(6) sec.