(Pb,La)TiO3 (PLT) thin films were deposited on various substrates by metal-organic chemical vapor deposition technique using a solid delivery system. A mixture of metal-organic precursors with wide range of La dopant concentration was prepared to investigate the effects of La doping concentration on the structural and dielectric properties of PLT thin films. As La concentration increases, the crystal structure of PLT thin films changed from tetragonal to pseudocubic and their dielectric constant increased. An annealing process after fabrication of PLT thin film capacitor improved ferroelectric properties. Pt top electrode was more effective in the improvement than RuO2 top electrode in rapid thermal annealing process using halogen lamp heater.