Microcrystalline silicon (mu c-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition when dichlorosilane (SiH2Cl2) is added to the SiH4-H-2 source gas. A dark conductivity of 5 X 10(-8) S/cm, activation energy of 0.62 eV, and photoconductivity of 1 X 10(-5) S/cm are obtained. The optical band gap for this material is approximately 1.1 eV. No special gas purification or microdoping is required. SiH2Cl2 added in small amounts has the additional effects of enhancing the crystallinity, and of reducing the oxygen incorporation by over a factor of 2. Sub-band gap absorption spectroscopy indicates a low defect density. Very high frequency deposition yields material with lower defect density and higher photoconductivity than material deposited using de plasma excitation. Transition from amorphous to microcrystalline growth occurs during the first 100-150 nm of film growth. The oxygen content increases as the crystallinity increases. A first p-i-n solar cell with a 1.8 mu m thick mu c-Si:H(:Cl) i layer exhibits V-oc=0.35 V, I-sc=4.14 mA/cm(2); and FF=55%, demonstrating device-quality material.