Ferroelectric bismuth-layer SrBi2Ta2O9 (SBT) thin films were prepared on Pt/SiO2/Si substrates by plasma-enhanced metalorganic chemical vapor deposition. The platinum bottom electrode deposited by metalorganic chemical vapor deposition shows a dense smooth state after deposition of SBT films and prevents bismuth diffusion into the platinum layer. The c-axis oriented SET films were crystallized at a deposition temperature of 550 degrees C. The dielectric constant and dissipation factor of SET films are 310 and 0.08, respectively, at 100 kHz. The remanent polarization and the coercive field obtained for 180 nm thick Sr0.9Bi2Ta2O9 films deposited at 550 degrees C were 15 mu/cm(2) and 50 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about 5.0 x 10(-7) A/cm(2) at 250 kV/cm. The films showed fatigue-free characteristics up to 7.0 x 10(9) switching bipolar pulses under 5 V.