A low temperature (35-45 degrees C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1-xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A thin native oxide which is formed by previous surface treatment involving OH- radicals greatly enhances the SiO2 deposition on HgCdTe. Thus, SiO2 films with a high refractive index (1.465) and a low p-etching rate (34 Angstrom/s) were obtained. Auger electron spectroscopy depth profile shows less interdiffusion of constituent atoms between the SiO2 layer and the HgCdTe substrate. Electrical properties of the SiO2/p-HgCdTe interface are also characterized at 77 K. It is found that the p-HgCdTe surface is accumulated and the effective surface charge density is estimated to be -2.25 x 10(10) cm(-2). The leakage current and dielectric breakdown strength are also found to be 0.356 nA (at -5 V) and above 650 KV/cm, respectively. Furthermore, the growth mechanism of LPD-SiO2 on HgCdTe is proposed.