화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.107, 207-214, March, 2022
DOI10.1016/j.jiec.2021.11.049  Export Citation
Quadrature moment simulation of silica nanoparticles aggregation and breakage in chemical mechanical polishing
Seulgi Choi1, Gyeongtae Im2, Eungchul Kim1, Kihong Park1, and Taesung Kim1, 3, †
  • 1School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
  • 2School of Mechanical Engineering, Soongsil University (SSU), Seoul-si 06978, Republic of Korea
  • 3SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
E-mail:
Chemical mechanical polishing (CMP), a wafer surface planarization method, is critical in the semiconductor industry because uniform and scratch-free processing is required for a highly integrated circuit on the wafer surface. Thus, the prediction of aggregated particle size during CMP helps achieve stable and precise processing during experimental circumstances. Herein, silica nanoparticle aggregation simulation during CMP process-based Quadrature Method of Moments (QMOM) was first described using ANSYS Fluent as a computational fluid dynamics (CFD) tool. Experiments were also implemented in a 10,000 class cleanroom using a CMP polisher actually used in the semiconductor industry. Moreover, a comparison of experimental particle size measured through zeta-potential and particle size analyzer and simulated Sauter mean diameter (D32) showed that the experimental data agreed well with the simulation results.
Keywords:Computational fluid dynamics (CFD);Quadrature method of moments (QMOM);Quadrature-based moment methods (QBMM);Chemical mechanical polishing (CMP);Semiconductor fabrication;Simulation analysis;Aggregation and breakage;Silica nanoparticle
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