게이트 하부 식각 구조 및 HfO 2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터

김유경; 손주연; 이승섭; 전주호; 김만경; 장수환; Yukyung Kim; Juyeon Son; Seungseop Lee; Juho Jeon; Man-Kyung Kim; Soohwan Jang

Korean Chemical Engineering Research, Vol.60, No.2, 313-319, May, 2022

DOI10.9713/kcer.2022.60.2.313 Export Citation

게이트 하부 식각 구조 및 HfO 2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터

AlGaN/GaN Field Effect Transistor with Gate Recess Structure and HfO 2 Gate Oxide

김유경, 손주연, 이승섭, 전주호, 김만경, 장수환^†

단국대학교 화학공학과, 16890 경기도 용인시 수지구 죽전로 152

Yukyung Kim, Juyeon Son, Seungseop Lee, Juho Jeon, Man-Kyung Kim, and Soohwan Jang^†

Department of Chemical Engineering, Dankook University, Yongin, 16890, Korea

E-mail:

초록

HfO2을 게이트 산화막으로 갖는 AlGaN/GaN 기반 고이동도 전계효과 트랜지스터(high electron mobility transistor, HEMT)의 노멀리 오프(normally-off) 작동 구현을 위하여 게이트 리세스(gate-recess) 깊이에 따른 소자 특성이 시뮬레 이션을 통하여 분석되었다. 전통적인 HEMT 구조, 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조, 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조가 모사되었다. 전통적인 HEMT 구조는 노멀리 온(normally-on) 특성을 나타내었 으며, 0 V의 게이트 전압 및 15 V의 드레인 전압 환경에서 0.35 A의 드레인 전류 특성을 나타내었다. 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조는 2DEG(2-dimensional electron gas) 채널의 전자 농도 감소로 인해, 같은 전압 인 가 조건에서 0.15 A의 드레인 전류 값을 보였다. 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조는 뚜렷한 노멀리 오프 동작을 나타내었으며, 0 V의 동작전압 값을 확인할 수 있었다.

AlGaN/GaN based HfO2 MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at VG = 0 V and VDS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

Keywords:GaN;Transistor;Normally-off

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[9] Kaminski N, Hilt O, IET Circuits Devices Syst., 8(3), 227 (2014)

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[15] Zhao Y, Xu S, Tao H, Zhang Y, Zhang C, Feng L, Peng R, Fan X, Du J, Zhang J, Hao Y, Materials, 14(1), 144 (2021)