We report surface-induced optical anisotropy spectra of high-index Si(115), (114),and (113) surfaces obtained using reflectance difference, spectroscopy. Air-oxidized surfaces show sharp derivative-type features that are step-induced and located near the critical point energies df bulk Si, consistent with those of lower-index Si(001) surfaces. Clean reconstructed surfaces are characterized by a broad feature near 3 eV that tends to decrease in amplitude upon H exposure and a step-induced structure near the (E-0', E-1) transition of bulk-Si. In contrast, H exposure of Ge-covered surfaces tends to sharpen and enhance lower-energy structures. The derivative-type features located near the bulk critical point energies of Si can be described in terms of electronic states localized by the finite penetration depth of light.