ZnO thin films have been obtained by the sol-gel method from a Zn(OOCCH3)(2) precursor on soda lime glass and silicon wafer substrates. The films, obtained by a single dipping procedure, were characterized by Fourier transform infrared (FTIR) and ultraviolet-visible (UV-vis) spectroscopies, atomic force microscopy, x-ray diffraction and ellipsometry measurements. Thermally untreated and annealed (100-450 degrees C) films were studied in order to analyze the influence of temperature on the formation and properties of the ZnO coatings. Remarkably, these results indicate that ZnO forms at considerably lower temperatures than 450 degrees C, which is usually considered in the literature as a reference temperature for the formation of ZnO. Thus, a sharp absorption edge of ZnO at similar to 380 nm can be easily observed in the UV-vis spectra of films annealed at 200 and 300 degrees C, accordingly, and the FTIR data indicate the absence of organic groups at these temperatures. The atomic force microscopy results show a uniform, void-free surface of the films, as well as larger grain sizes as the annealing temperature is increased. The x-ray diffraction patterns show that the films are polycrystalline and also show evidence of the formation of ZnO at temperatures as low as 200 degrees C. The refractive index values, obtained by ellipsometry, increase with annealing temperature, up to a value of 1.96 for the film fired at 450 degrees C.