Reactive ion etching of Pb(ZrxTi1-x)O-3 (PZT) is demonstrated using pure SF6 gas. The variation of the etch rate with radio frequency (rf) power and process pressure has been investigated and rates up to 160 nm min(-1) were obtained. The dependence of the etch rate on the plasma parameters seems to indicate an ion-induced mechanism. Analysis of photoresist erosion in the process has been performed using an atomic force microscope. It has been found that roughening of the resist surface is accelerated when high rf powers and high process pressures are used. Based on these studies a recipe fdr PZT etching with a photoresist mask is discussed.