Different dry etching methods were used to structure single crystal LaAlO3 (100). Utilization of reactive ion beam etching with CHF3 caused enhancement of the etch rate, the selectivity and the step angles compared to conventionally applied Ar ion milling. The influence of the etch parameters on the surface damage was investigated by Rutherford backscattering spectroscopy/channeling studies and x-ray spectroscopy. The chemically assisted ion beam etching with chlorine gas examined causes the lowest degree of surface damage but also the lowest etch rate.