This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increases at a constant source power level. The rate at which the dielectric coupling window is eroded is found to scale with both the peak-to-peak rf voltage and the ion current density, and the dielectric window erosion is found to influence the resulting plasma gas-phase chemistry. The changes in plasma electrical and chemical characteristics have a large impact on the surface processes occurring in inductively coupled fluorocarbon plasmas such as fluorocarbon deposition, fluorocarbon etching, SiO2 etching and Si etching. Further, we show how the selective SiO2-to-Si etch process changes with varying capacitive coupling.