Thin carbon-nitrogen films (i.e., CNx) have been obtained by dual ion beam sputtering. The chemical composition and the type of bonding of the CN, material have been examined, as a function of the deposition parameters, by Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS). The high concentration of C=N bonds present in some of the samples, as stated by FT-IR, allowed us to correlate this type of bonding with some of the features observed in the corresponding XPS and EELS spectra. Nitrogen concentrations of up to 45 at. %, depending on the deposition conditions, have been estimated by XPS and EELS. The films deposited at low energy were rather homogeneous, as demonstrated by Auger electron spectroscopy depth profiling, and show the highest C-N simple bonds concentration. On the contrary, the use of high energy assisting nitrogen ions leads to the formation of carbonitrile groups (i.e., C=N), as well as resputtering effects that significantly reduce the thickness of the films and even hinder the growth of a film. The topography and morphology of the different films, as determined by atomic force microscopy, were also observed to depend on the conditions of assistance.