When thin film devices are integrated in display or imaging arrays, the intrinsic mechanical stresses in the films can be severe enough to cause the films to either crack or even peel off the underlying substrate layer. This is a particular concern in large area x-ray imaging applications based on molybdenum/amorphous silicon (Mo/a-Si:H) Schottky diodes. This family of image sensors can be used for direct detection of x rays without the need for a phosphor layer [W. Zhao and J. A. Rowlands, Med. Phys. 22, 1595 (1995)]. In these sensors, the interaction of x-ray photons with Mo leads to injections of high energy electrons into a reverse-biased a-Si:H depletion layer, thereby producing an amplified output signal due to charge multiplication. The generated charge is read our by a thin film transistor (TFT) which is composed of intrinsic amorphous silicon (i-a-Si:H) as the active channel layer, silicon nitride (a-SiNx) as the insulating layer, and highly duped microcrystalline silicon (n(+)mu c-Si:H) as the contact layer. For example, the i-u-Si:T-I layer is in compressive stress with a magnitude of 0.116 GPa, whereas low temperature, low resistivity n(+)mu c-Si:H layer is in compressive stress of 1.47 GPa. The a-SiNx layer is in tensile stress of 0.222 GPa. The heavy metals used in the x-ray detector, such as Mo and chromium (Cr) (deposited at 5 mTorr), are found to be in tensile stress of 0.807 and 0.575 GPa, respectively. This article presents the internal mechanical stresses in thin film devices used in x-ray imaging, and more importantly, how the total film stress can be reduced without undermining device performance.