The control of plasma-surface interactions in terms of synergistic effects of ions, photons, and chemically active species is important for the optimization of plasma enhanced chemical vapor deposition of thin films and for plasma-induced surface modification. In the present work, we use a dual-mode microwave/radio frequency (MW/rf) plasma system, in which we investigate the effect of plasma parameters (gas type and pressure, self-bias voltage, for example) on the energy and flux of ionic species arriving at the specimen surface. We determine the ion energy distribution functions (IEDFs) using a mass spectrometer/energy analyzer, in Ar and N-2 discharges, excited at different frequencies. The results for Ar+, N-2(+), and N+ ions show structured IEDFs at the rf-powered electrode in the single- and dual-frequency modes, while a single peak is observed in the continuous MW plasma. The MW/rf plasma presents substantially higher ion flux and plasma density, and a much thinner sheath than the rf case. Changes in plasma impedance, measured by a rf current-voltage probe, support the results on plasma density and sheath thickness, determined from the IEDFs. The MW/rf discharge impedance displays a resistive behavior in contrast to rf plasma, where the impedance is capacitive.