The profiles of etched quantum dots are determined by the etch conditions used, but as well, by the geometry of the array in which the dots are situated. Arrays of 60 nm diam dots in ZnTe were formed, and etched using reactive ion etching in a mixture of methane and hydrogen. Using the same etch conditions, the geometry was systematically modified, either by utilizing increased dot-to-dot spacing in uniform arrays, or by defining successively larger "clearing areas" centered about a single, "specimen dot." For the uniform array of dots, the degree of undercut of the profile increases with the dot spacing, and is proportional to the etched area. For the specimen dot, the degree of undercut of the profile is proportional to the radius of the clearing. Understanding of the importance of the geometry allows formation of high density arrays of vertical quantum dots in the II-VI materials.