Two-dimensional doping profiles can be determined from multiple one-dimensional secondary ion mass spectroscopy (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as-implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one-dimensional SIMS measurements. Measurements have been done with a Perkin Elmer Model 6300 SIMS and a Cameca IMS-3f SIMS. Refinements have been made in the numerical alignment of the separate one-dimensional SIMS data sets, which lead to more accurate reconstructions of the two-dimensional profiles.