A numerical method for the determination of ultra-shallow metal-oxide-semiconductor (MOS) doping profiles and the associated interface trap distribution from measured capacitance-voltage (C-V) characteristics is presented. The method is demonstrated via two cases : (a) theoretical analysis to assess the accuracy of the method; and (b) fabricated MOS test structures, with correlations with spreading resistance profiling (SRP) and secondary ion mass spectroscopy (SIMS). Excellent agreement is seen between C-V and SRP. Our method appears so accurate that it should be considered for routine C-V analysis for shallow MOS doping profiles.