Quantitative chemical delineation of both n+ and p+ junctions in silicon-based integrated circuits has been achieved and monitored with respect to etching time, temperature, and ultraviolet illumination, using samples prepared by a new planar polishing technique for uniform initial flatness. Junction depths and dopant profiles obtained from cross-sectional transmission electron microscopy images are compared and cross-calibrated with both secondary ion mass spectrometry and spreading resistance profiling, confirming that dopant concentrations of 10(17) cm-3 are detected and laterally mapped with 10 nm spatial resolution.