This article presents results obtained using microwave reflection between 26.5 and 36.5 GHz for measuring the sheet resistance of doped layers in semiconductors. The advantage of the technique is that it is nondestructive and has a dynamic range and spatial resolution similar to what it can be obtained with four point resistivity probes. Using this technique, we have been able to measure the sheet resistance of shallow implanted layers on silicon wafers implanted with doses in the range of 10(16)-10(12) ions/cm2. The sheet resistance measured was between 30 and 80 000 OMEGA/square.