Journal of Vacuum Science & Technology B, Vol.12, No.2, 1099-1101, 1994
Growth of the (in,Al,Ga)as Quaternary Alloy System on GaAs at Low Substrate Temperatures by Molecular-Beam Epitaxy
The III-V quaternary alloy system of (In,Al,Ga)As has been successfully grown on (100) GaAs substrates at low substrate temperatures. Visible photoluminescence emission spanning the wavelengths from 630 to 700 nm has been observed from material grown at substrate temperatures ranging from 300 to 500-degrees-C. It is found that the emission intensity is influenced by the substrate temperature. Results are presented for the In0.10Al0.41Ga0.49As quaternary alloy.