Carbon doping in III-V compounds has generated much attention because Of applications in high temperature and high current devices. We present results using a novel electron beam carbon source for doping GaAs and GaSb. The source construction allows normal effusion cell geometry and utilizes electron bombardment for evaporation from a carbon rod. Mass spectrometer data showed the carbon flux contained C1, C2, and C3 Species. For GaAs, controllable hole doping densities between 3x10(15) cm-3 and 5x10(19) were obtained. For GaSb, carbon doping resulted in P-type material with hole densities ranging from the background level of 2x10(16) to 3X10(20) cm-3 for specular film morphology. Hole mobility values for GaAs and GaSb are comparable to published data.