The surface germylation process is an improved method to realize the fine pattern of ultra large scale integration and overcome the problems in conventional surface imaging resist technologies such as removability of the patterned resist. The surface germylation process is evaluated with electron spectroscopy for chemical analysis. After the germylation, the germanium is observed at the resist surface. The germanium introduced into the resist film is oxidized by oxygen dry etching and condensed at the resist surface. The density of the germanium introduced correlated to the etching resistance of the resist. The diffusion of the germylation agent into the resist film, which depends on the deep ultraviolet (UV) dose, is necessary to give the germanium oxide layer at the resist surface. In the near surface at the germylation layer at the deep UV dosed resist film, the germylation occurs completely to every reaction site in the resist film.