We report the direct observation of Si(Ga) donors in the top six layers of GaAs(110). Surface Si(Ga) has a localized electronic feature due to its dangling bond, while subsurface Si(Ga) produces delocalized protrusions in filled and empty state scanning tunneling microscopy images, with a full width at half-maximum of approximately 25 angstrom and a height from approximately 0.2 to 2 angstrom, depending on the sample bias and location under the surface. The delocalized features of subsurface Si(Ga) can be understood in terms of the perturbation of the local band structure by the Coulomb potential of Si(Ga).